11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
| Parameter Name | Attribute value |
| Number of terminals | 2 |
| Minimum breakdown voltage | 20 V |
| Processing package description | GREEN, PLASTIC, TO-252, 3 PIN |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| state | DISCONTINUED |
| packaging shape | RECTANGULAR |
| Package Size | SMALL OUTLINE |
| surface mount | Yes |
| Terminal form | GULL WING |
| terminal coating | MATTE TIN |
| Terminal location | SINGLE |
| Packaging Materials | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE |
| Shell connection | DRAIN |
| Number of components | 1 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Channel type | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE POWER |
| Maximum leakage current | 11.6 A |
| Maximum drain on-resistance | 0.0210 ohm |
| Maximum leakage current pulse | 46.8 A |
| DMN2027LK3-13 | DMN2027LK3 | |
|---|---|---|
| Description | 11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 11.6 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| Number of terminals | 2 | 2 |
| Minimum breakdown voltage | 20 V | 20 V |
| Processing package description | GREEN, PLASTIC, TO-252, 3 PIN | GREEN, PLASTIC, TO-252, 3 PIN |
| Lead-free | Yes | Yes |
| EU RoHS regulations | Yes | Yes |
| state | DISCONTINUED | DISCONTINUED |
| packaging shape | RECTANGULAR | RECTANGULAR |
| Package Size | SMALL OUTLINE | SMALL OUTLINE |
| surface mount | Yes | Yes |
| Terminal form | GULL WING | GULL WING |
| terminal coating | MATTE TIN | MATTE TIN |
| Terminal location | SINGLE | SINGLE |
| Packaging Materials | PLASTIC/EPOXY | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Shell connection | DRAIN | DRAIN |
| Number of components | 1 | 1 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Channel type | N-CHANNEL | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
| Maximum leakage current | 11.6 A | 11.6 A |
| Maximum drain on-resistance | 0.0210 ohm | 0.0210 ohm |
| Maximum leakage current pulse | 46.8 A | 46.8 A |
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