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H5N2005D(L)-(2)

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size34KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

H5N2005D(L)-(2) Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

H5N2005D(L)-(2) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
surface mountNO
Base Number Matches1
H5N2005DL, H5N2005DS
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1373 (Z)
Target Specification 1st. Edition
Mar. 2001
Features
Low on-resistance
Low drive current
High speed switching
Outline
DPAK-2
4
4
D
1 2
3
H5N2005DS
G
1 2
3
H5N2005DL
S
1. Gate
2. Drain
3. Source
4. Drain

H5N2005D(L)-(2) Related Products

H5N2005D(L)-(2) H5N2005D(S)-(3) H5N2005D(S)-(1)
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code unknown unknown unknown
Configuration Single Single Single
Maximum drain current (Abs) (ID) 6 A 6 A 6 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 25 W 25 W 25 W
surface mount NO YES YES
Base Number Matches 1 1 1
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