H5N2005DL, H5N2005DS
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1373 (Z)
Target Specification 1st. Edition
Mar. 2001
Features
•
Low on-resistance
•
Low drive current
•
High speed switching
Outline
DPAK-2
4
4
D
1 2
3
H5N2005DS
G
1 2
3
H5N2005DL
S
1. Gate
2. Drain
3. Source
4. Drain
H5N2005DL, H5N2005DS
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain
current
Body-drain diode reverse drain peak
current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D
Note 1
(pulse)
Ratings
200
±30
(6)
(24)
(6)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
I
DR
I
DR
Note 1
(pulse)
(24)
25
5
150
–55 to +150
Pch
Note
θ
ch-c
Tch
Tstg
2
2
H5N2005DL, H5N2005DS
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
I
GSS
200
—
—
(3.0)
—
(2.0)
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
(0.52)
(3.4)
(300)
(50)
(14)
(9.5)
(1.8)
(5.2)
(19)
(16)
(44)
(12)
(1.0)
(90)
(300)
Max
—
±0.1
1
(4.5)
(0.65)
—
—
—
—
—
—
—
—
—
—
—
(1.5)
—
—
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
Unit
V
µA
µA
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±30 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 3 A, V
GS
= 10 V
Note 4
I
D
= 3 A, V
DS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
= 160 V
V
GS
= 10 V
I
D
= 6 A
I
D
= 3 A
V
GS
= 10 V
R
L
= 33.3
Rg = 10
I
F
= 6 A, V
GS
= 0
I
F
= 6 A, V
GS
= 0
diF/dt = 100 A/us
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate charge
Gate to source charge
Gateto drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Body-drain diode reverse
recovery charge
Note:
4. Pulse test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
V
DF
trr
Qrr
3
H5N2005DL, H5N2005DS
Package Dimensions
As of January, 2001
6.5
±
0.5
5.4
±
0.5
1.7
±
0.5
Unit: mm
2.3
±
0.2
0.55
±
0.1
4.7
±
0.5
16.2
±
0.5
3.1
±
0.5
1.15
±
0.1
0.8
±
0.1
(0.7)
5.5
±
0.5
1.2
±
0.3
0.55
±
0.1
2.29
±
0.5
2.29
±
0.5
0.55
±
0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (L)-(2)
—
—
0.42 g
4
H5N2005DL, H5N2005DS
As of January, 2001
1.7
±
0.5
Unit: mm
6.5
±
0.5
5.4
±
0.5
2.3
±
0.2
0.55
±
0.1
(4.9)
5.5
±
0.5
1.2 Max
0 – 0.25
1.15
±
0.1
2.5
±
0.5
0.8
±
0.1
2.29
±
0.5
2.29
±
0.5
0.55
±
0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(5.3)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
5
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