GS816218(B/D)/GS816236(B/D)/GS816272(C)
119-, 165- & 209-Pin BGA
Commercial Temp
Industrial Temp
Features
1M x 18, 512K x 36, 256K x 72
18Mb S/DCD Sync Burst SRAMs
250 MHz–133MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-, 165-, and 209-bump BGA package
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
Flow Through/Pipeline Reads
SCD and DCD Pipelined Reads
Pipeline
3-1-1-1
3.3 V
2.5 V
Flow
Through
2-1-1-1
3.3 V
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
Curr (x18)
Curr (x36)
Curr (x72)
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
Curr (x18)
Curr (x36)
Curr (x72)
-250 -225 -200 -166 -150 -133 Unit
2.5 2.7 3.0 3.4 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.7 7.5 ns
280
330
430
275
320
410
5.5
5.5
175
200
255
175
200
255
255
300
395
250
295
380
6.0
6.0
165
190
240
165
190
240
230
270
350
230
265
335
6.5
6.5
160
180
225
160
180
225
200
230
300
195
225
290
7.0
7.0
150
170
115
150
170
115
185
215
270
180
210
260
7.5
7.5
145
165
210
145
165
210
165
190
245
165
185
235
8.5
8.5
135
150
185
135
150
185
mA
mA
mA
mA
mA
mA
ns
ns
mA
mA
mA
mA
mA
mA
The GS816218(B/D)/GS816236(B/D)/GS816272(C) is a SCD
(Single Cycle Deselect) and DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. DCD SRAMs pipeline disable
commands to the same degree as read commands. SCD SRAMs
pipeline deselect commands one stage less than read commands.
SCD RAMs begin turning off their outputs immediately after the
deselect command has been captured in the input registers. DCD
RAMs hold the deselect command for one full cycle and then
begin turning off their outputs just after the second rising edge of
clock. The user may configure this SRAM for either mode of
operation using the SCD mode input.
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
Byte Write and Global Write
FLXDrive™
2.5 V
Functional Description
Applications
The GS816218(B/D)/GS816236(B/D)/GS816272(C) is an
18,874,368-bit high performance synchronous SRAM with a 2-bit
burst address counter. Although of a type originally developed for
Level 2 Cache applications supporting high performance CPUs,
the device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip set
support.
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
Controls
The GS816218(B/D)/GS816236(B/D)/GS816272(C) operates on
a 2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V
compatible. Separate output power (V
DDQ
) pins are used to
decouple output noise from the internal circuits and are 3.3 V and
2.5 V compatible.
Rev: 2.15a 9/2002
1/43
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ByteSafe is a Trademark of Giga Semiconductor, Inc. (GSI Technology).
GS816218(B/D)/GS816236(B/D)/GS816272(C)
GS816272 BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A1
–DQ
A9
DQ
B1
–DQ
B9
DQ
C1
–DQ
C9
DQ
D1
–DQ
D9
DQ
E1
–DQ
E9
DQ
F1
–DQ
F9
DQ
G1
–DQ
G9
DQ
H1
–DQ
H9
B
A
, B
B
, B
C
,B
D,
B
E
, B
F
, B
G
,B
H
NC
CK
GW
E
1,
E
3
E
2
G
ADV
ADSP, ADSC
ZZ
FT
LBO
SCD
MCH
MCL
PE
BW
ZQ
TMS
TDI
TDO
TCK
V
DD
V
SS
V
DDQ
Rev: 2.15a 9/2002
I
I
I
I
I
O
I
I
I
I
3/43
Type
I
I
Description
Address field LSBs and Address Counter Preset Inputs.
Address Inputs
I/O
Data Input and Output pins
I
—
I
I
I
I
I
I
I
I
I
I
I
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D,
DQ
E
,
DQ
F
, DQ
G
, DQ
H
I/Os; active low
No Connect
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Single Cycle Deselect/Dual Cycle Deselect Mode Control
Must Connect High
Must Connect Low
Parity Bit Enable; active low (High = x16/32 Mode, Low = x18/36 Mode)
Byte Enable; active low
FLXDrive Output Impedance Control
(Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Core power supply
I/O and Core Ground
Output driver power supply
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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