IXGR40N60BD1 datasheet, PDF - EEWORLD Datasheet

IXGR40N60BD1: DescriptionInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size54KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	ISOPLUS
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Manufacturer packaging code	ISOPLUS
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	70 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	570 ns
Nominal on time (ton)	55 ns
Base Number Matches	1

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