2N5883 datasheet, PDF - EEWORLD Datasheet

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2N5883: Description25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3; Categorysemiconductor Discrete semiconductor; File Size111KB，3 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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2N5883 Overview

25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3

2N5883 Parametric

Parameter Name	Attribute value
Number of terminals	2
Transistor polarity	PNP
Maximum collector current	25 A
Maximum Collector-Emitter Voltage	60 V
Processing package description	TO-3, 2 PIN
state	ACTIVE
packaging shape	ROUND
Package Size	FLANGE MOUNT
Terminal form	PIN/PEG
terminal coating	TIN LEAD
Terminal location	BOTTOM
Packaging Materials	METAL
structure	SINGLE
Shell connection	COLLECTOR
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	200 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	20
Rated crossover frequency	4 MHz

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SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5883 2N5884

DESCRIPTION

·With TO-3 package

·Complement to type 2N5885 2N5886

·High power dissipations

APPLICATIONS

·They are intended for use in power linear

and switching applications

PINNING

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

DESCRIPTION

Absolute maximum ratings(Ta=

)

SYMBOL

CBO

PARAMETER

2N5883

Collector-base voltage

2N5884

2N5883

CEO

EBO

stg

Collector-emitter voltage

2N5884

Emitter-base voltage

Collector current

Collector current-peak

Base current

Total Power Dissipation

Junction temperature

Storage temperature

=25

Open collector

Open base

-80

-5

-25

-50

-7.5

200

-65~200

Open emitter

-80

-60

CONDITIONS

VALUE

-60

UNIT

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

0.875

UNIT

2N5883 Related Products

	2N5883	2N5884
Description	25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3	25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
Number of terminals	2	2
Transistor polarity	PNP	PNP
Maximum collector current	25 A	25 A
Maximum Collector-Emitter Voltage	60 V	60 V
Processing package description	TO-3, 2 PIN	TO-3, 2 PIN
state	ACTIVE	ACTIVE
packaging shape	ROUND	ROUND
Package Size	FLANGE MOUNT	FLANGE MOUNT
Terminal form	PIN/PEG	PIN/PEG
terminal coating	TIN LEAD	TIN LEAD
Terminal location	BOTTOM	BOTTOM
Packaging Materials	METAL	METAL
structure	SINGLE	SINGLE
Shell connection	COLLECTOR	COLLECTOR
Number of components	1	1
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum ambient power consumption	200 W	200 W
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	20	20
Rated crossover frequency	4 MHz	4 MHz

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