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2N5884

Description
25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size111KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2N5884 Overview

25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3

2N5884 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityPNP
Maximum collector current25 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionTO-3, 2 PIN
stateACTIVE
packaging shapeROUND
Package SizeFLANGE MOUNT
Terminal formPIN/PEG
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption200 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor20
Rated crossover frequency4 MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5883 2N5884
DESCRIPTION
·With TO-3 package
·Complement to type 2N5885 2N5886
·High power dissipations
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
2N5883
Collector-base voltage
2N5884
2N5883
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N5884
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-80
-5
-25
-50
-7.5
200
200
-65~200
V
A
A
A
W
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
/W

2N5884 Related Products

2N5884 2N5883
Description 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
Number of terminals 2 2
Transistor polarity PNP PNP
Maximum collector current 25 A 25 A
Maximum Collector-Emitter Voltage 60 V 60 V
Processing package description TO-3, 2 PIN TO-3, 2 PIN
state ACTIVE ACTIVE
packaging shape ROUND ROUND
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form PIN/PEG PIN/PEG
terminal coating TIN LEAD TIN LEAD
Terminal location BOTTOM BOTTOM
Packaging Materials METAL METAL
structure SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum ambient power consumption 200 W 200 W
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 20 20
Rated crossover frequency 4 MHz 4 MHz

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