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HB56RW872ES-8B

Description
Fast Page DRAM Module, 8MX72, 80ns, MOS, DIMM-168
Categorystorage    storage   
File Size303KB,26 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HB56RW872ES-8B Overview

Fast Page DRAM Module, 8MX72, 80ns, MOS, DIMM-168

HB56RW872ES-8B Parametric

Parameter NameAttribute value
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width36
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density603979776 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height25.4 mm
Maximum standby current0.046 A
Maximum slew rate1.27 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
HB 56RW872ES Series
8,388,608-Word x 72-Bit(ECC) High Density Dynamic RAM
Module
Preliminary
Rev. 0
Dec. 19, 1995
The HB56RW872ES belongs to 8 Byte DIMM (Dual In-Line Memory Module) family, and has been
developed as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56RW872ES is a 8M x 72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM
(HM51W16400) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244)
sealed in TSSOP package.
An outline of the HB56RW872ES is 168-pin socket type package (dual-lead out).
Therefore, the HB56RW872ES makes high density mounting possible without surface mount technology.
The HB56RW872ES provides common data inputs and outputs.
Decoupling capacitors are mounted beside each TCP on its module board.
Features
168-pin socket type package (Dual lead out)
Lead pitch: 1.27 mm
Single 3.3 V (
ñ
0.3V) supply
High speed
Access time: tRAC = 60/70/80 ns (max.)
Access time: tCAC = 20/23/25 ns (max.)
Low power dissipation
Active mode: 5.54/4.90/4.57W (max.)
Standby mode: 295mW (max.)
Buffered input except/RAS and DQ
4 byte interleave enabled, dual address input (A0/B0)
Fast page mode capability
4,096 refresh cycle/64 ms
2 variations of refresh
/RAS - only refresh
/CAS - before - /RAS refresh

HB56RW872ES-8B Related Products

HB56RW872ES-8B HB56RW872ES-6B HB56RW872ES-7B
Description Fast Page DRAM Module, 8MX72, 80ns, MOS, DIMM-168 Fast Page DRAM Module, 8MX72, 60ns, MOS, DIMM-168 Fast Page DRAM Module, 8MX72, 70ns, MOS, DIMM-168
Parts packaging code DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE
Maximum access time 80 ns 60 ns 70 ns
Other features RAS ONLY/CAS BEFORE RAS REFRESH RAS ONLY/CAS BEFORE RAS REFRESH RAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width 36 36 36
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 603979776 bit 603979776 bit 603979776 bi
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 72 72 72
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 168 168 168
word count 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 8MX72 8MX72 8MX72
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
Maximum seat height 25.4 mm 25.4 mm 25.4 mm
Maximum standby current 0.046 A 0.046 A 0.046 A
Maximum slew rate 1.27 mA 1.54 mA 1.36 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology MOS MOS MOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Base Number Matches 1 1 -
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