HY5117804BSLR-60 datasheet, PDF

HY5117804BSLR-60: DescriptionEDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, REVERSE, TSOP2-28; Categorystorage storage; File Size221KB，7 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY5117804BSLR-60 Overview

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, REVERSE, TSOP2-28

Parameter Name	Attribute value
Parts packaging code	TSOP
package instruction	TSOP2-R,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G28
JESD-609 code	e6
length	18.41 mm
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2-R
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	7.62 mm
Base Number Matches	1

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