TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 5 PIN, BIP General Purpose Small Signal
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| package instruction | SMALL OUTLINE, R-PDSO-G5 |
| Contacts | 5 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | BUILT-IN BIAS RESISTORS |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| JESD-30 code | R-PDSO-G5 |
| JESD-609 code | e0 |
| Number of components | 2 |
| Number of terminals | 5 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| RN2501-11 | RN2501(TE85L2) | RN2501TE85L | RN2501(TE85L) | RN2501(TE85R) | RN2501TE85R | |
|---|---|---|---|---|---|---|
| Description | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| package instruction | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Other features | BUILT-IN BIAS RESISTORS | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| JESD-30 code | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 |
| Number of components | 2 | 2 | 2 | 2 | 2 | 2 |
| Number of terminals | 5 | 5 | 5 | 5 | 5 | 5 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Contacts | 5 | 5 | - | 5 | 5 | - |
| ECCN code | EAR99 | EAR99 | - | EAR99 | EAR99 | - |
| Maker | - | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |
| Minimum DC current gain (hFE) | - | 30 | 30 | 30 | 30 | 30 |
| Maximum operating temperature | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Nominal transition frequency (fT) | - | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
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