TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
Parameter Name | Attribute value |
Maker | Toshiba Semiconductor |
package instruction | SMALL OUTLINE, R-PDSO-G5 |
Contacts | 5 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | BUILT-IN BIAS RESISTOR RATIO IS 1 |
Maximum collector current (IC) | 0.1 A |
Collector-emitter maximum voltage | 50 V |
Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 30 |
JESD-30 code | R-PDSO-G5 |
Number of components | 2 |
Number of terminals | 5 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | PNP |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 200 MHz |
RN2501(TE85R) | RN2501-11 | RN2501(TE85L2) | RN2501TE85L | RN2501(TE85L) | RN2501TE85R | |
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Description | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
package instruction | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
Other features | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTORS | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
JESD-30 code | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 | R-PDSO-G5 |
Number of components | 2 | 2 | 2 | 2 | 2 | 2 |
Number of terminals | 5 | 5 | 5 | 5 | 5 | 5 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Maker | Toshiba Semiconductor | - | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |
Contacts | 5 | 5 | 5 | - | 5 | - |
ECCN code | EAR99 | EAR99 | EAR99 | - | EAR99 | - |
Minimum DC current gain (hFE) | 30 | - | 30 | 30 | 30 | 30 |
Maximum operating temperature | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C |
transistor applications | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Nominal transition frequency (fT) | 200 MHz | - | 200 MHz | 200 MHz | 200 MHz | 200 MHz |