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1N4763A-G_B0_10001

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1N4763A-G_B0_10001 Overview

Zener Diode

1N4763A-G_B0_10001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeZENER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

1N4763A-G_B0_10001 Preview

Download Datasheet
1N4728A-G~1N4764A-G
SILICON ZENER DIODE
VOLTAGE
FEATURES
• Low inductance
• High temperature soldering : 260°C /10 seconds at terminals
• Glass package has Underwriters Laboratory Flammability Classification
• Lead free in comply with EU RoHS 2011/65/EU directives
1.0(26.0)MIN.
0.030(0.75)
0.026(0.65)
3.3 to 100 Volts
POWER
1 Watts
0.177(4.5)
MECHANICAL DATA
• Case: Molded Glass DO-41G
• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
guaranteed
• Polarity: Color band denotes positive end
• Mounting position:Any
• Weight: 0.012 ounce, 0.317 gram
0.138(3.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
1.0(26.0)MIN.
0.107(2.7)
0.080(2.0)
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Symbol
Value
1*
-65 to +200
-65 to +200
Units
W
O
C
P
TOT
T
J
T
STG
C
C
O
*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at I
F
= 200mA
Symbol
Min.
--
--
Typ.
Max.
170*
1.2
Uni ts
K/W
V
R
θ
JA
V
F
--
--
*Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
November 29,2012-REV.07
PAGE . 1
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