RN2501(TE85L) datasheet, PDF - EEWORLD Datasheet

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RN2501(TE85L): DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size467KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2501(TE85L) Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

RN2501(TE85L) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G5
Contacts	5
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

RN2501(TE85L) Related Products

	RN2501(TE85L)	RN2501-11	RN2501(TE85L2)	RN2501TE85L	RN2501(TE85R)	RN2501TE85R
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTORS	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 code	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	2	2	2	2	2
Number of terminals	5	5	5	5	5	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Contacts	5	5	5	-	5	-
ECCN code	EAR99	EAR99	EAR99	-	EAR99	-
Minimum DC current gain (hFE)	30	-	30	30	30	30
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Nominal transition frequency (fT)	200 MHz	-	200 MHz	200 MHz	200 MHz	200 MHz

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