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BLX65ES

Description
TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power
CategoryDiscrete semiconductor    The transistor   
File Size51KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BLX65ES Overview

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power

BLX65ES Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Minimum power gain (Gp)9 dB
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1400 MHz
Base Number Matches1

BLX65ES Related Products

BLX65ES BLX65E
Description TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection EMITTER EMITTER
Maximum collector current (IC) 0.7 A 0.7 A
Collector-emitter maximum voltage 16 V 16 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 code TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3
Number of components 1 1
Number of terminals 3 3
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Minimum power gain (Gp) 9 dB 9 dB
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 1400 MHz 1400 MHz
Base Number Matches 1 1

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