MRF174
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
ASI MRF174
is a gold metallized
N-Channel enhancement mode MOSFET,
intended for use in 28 VDC large signal
applications to 200 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
L
S
FEATURES:
•
P
G
= 9.0 dB min. at 150 MHz
•
Omnigold™
Metalization System
•
Class-A
D
Ø .125 N O M .
C
B
G
E
H
D
G
F
S
K
I J
MAXIMUM RATINGS
I
D
V
DSS
V
GS
V
DGR
P
DISS
T
J
T
STG
θ
JC
13 A
65 V
±40
V
65 V
270 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.65 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.980 / 24.89
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.245 / 6.22
.720 / 18.28
.125 / 3.18
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
M INIM UM
inches / m m
M AXIM U M
inches / m m
.220 / 5.59
.125 / 3.18
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
NF
P
G
η
D
I
D
= 50 mA
V
DS
= 28 V
V
DS
= 0 V
T
C
= 25 °C
NONE
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
MINIMUM
65
TYPICAL MAXIMUM
10
1.0
UNITS
V
mA
µA
V
mho
I
D
= 100 mA
I
D
= 3.0 A
1.0
1.75
3.0
2.5
175
190
40
3.0
11.8
60
6.0
V
DS
= 28 V
I
D
= 2.0 A
V
DD
= 28 V
I
DQ
= 100 mA
V
GS
= 0 V
V
DD
= 28 V
I
DQ
= 250 mA
f = 1.0 MHz
f = 150 MHz
P
out
= 125 W
f = 150 MHz
pF
dB
dB
%
9.0
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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