BLX65E datasheet, PDF - EEWORLD Datasheet

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BLX65E: DescriptionTRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power; CategoryDiscrete semiconductor The transistor; File Size51KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLX65E Overview

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power

BLX65E Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	16 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Minimum power gain (Gp)	9 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1400 MHz
Base Number Matches	1

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BLX65E Related Products

	BLX65E	BLX65ES
Description	TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power	TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39, BIP RF Power
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	EMITTER	EMITTER
Maximum collector current (IC)	0.7 A	0.7 A
Collector-emitter maximum voltage	16 V	16 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Minimum power gain (Gp)	9 dB	9 dB
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1400 MHz	1400 MHz
Base Number Matches	1	1

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