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SGP30N60

Description
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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SGP30N60 Overview

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB

SGP30N60 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS, FAST
Maximum collector current (IC)41 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)391 ns
Nominal on time (ton)76 ns
Base Number Matches1
s
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Product Information 04. 98
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