ER2B datasheet, PDF - EEWORLD Datasheet

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ER2B: DescriptionRectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size355KB，2 Pages; ManufacturerDaco Semiconductor Co., Ltd.

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ER2B Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

ER2B Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

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ER2A

THRU

ER2J

SUPER FAST RECOVERY GLASS PASSIVATED RECTIFIER

he plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

or surface mounted applications

Super fast switching for high efficiency

ow reverse leakage

uilt-in strain relief,ideal for automated placement

igh forward surge current capability

igh temperature soldering guaranteed:

50 C/10 seconds at terminals

Case:

JEDEC DO-214AA molded plastic bod y

Terminals:

Solder Plated , solderable per

MIL-STD-750,Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:0.005

ounce, 0.138 grams

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

L

=55 C

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 2.0A

Maximum DC reverse current

T

A

=25 C

at rated DC blocking voltage

T

A

=100 C

Maximum reverse recovery time

(NOTE 1)

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

SYMBOLS

ER2A ER2B

ER2C ER2D ER2E

ER2G ER2J

UNITS

VOLTS

Amps

V

RRM

V

RMS

V

DC

I

(AV)

50

35

50

100

70

100

150

105

150

200

140

200

2.0

300

210

300

400

280

400

600

420

600

I

FSM

V

F

I

R

t

rr

C

J

R

q

JA

T

J

,

T

STG

0.95

50.0

1.25

5.0

50.0

35

60.0

40.0

-65 to +150

1.70

Amps

Volts

uA

ns

pF

C/W

C

Note:1.Reverse

recovery condition I

F

=0.5A,I

R

=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.P.C.B. mounted with 0.2x0.2 (5.0x5.0mm) copper pad areas

ER2B Related Products

	ER2B	ER2G	ER2A	ER2C	ER2J
Description	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
package instruction	R-PDSO-C2	R-PDSO-C2	SMB, 2 PIN	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V	1.25 V	0.95 V	0.95 V	1.7 V
JEDEC-95 code	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1
Phase	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	100 V	400 V	50 V	150 V	600 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs
surface mount	YES	YES	YES	YES	YES
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1
Maker	-	Daco Semiconductor Co., Ltd.	Daco Semiconductor Co., Ltd.	Daco Semiconductor Co., Ltd.	Daco Semiconductor Co., Ltd.

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