2SJ278MYTL-E datasheet, PDF - EEWORLD Datasheet

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2SJ278MYTL-E: Description1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size71KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SJ278MYTL-E Overview

1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

2SJ278MYTL-E Parametric

Parameter Name	Attribute value
Brand Name	Renesas
Is it Rohs certified?	conform to
Parts packaging code	UPAK
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	4
Manufacturer packaging code	PLZZ0004CA-A4
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	1 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SJ278

Silicon P Channel MOS FET

REJ03G0856-0200

(Previous: ADE-208-1190)

Rev.2.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

4 V gate drive device can be driven from 5 V source

Suitable for switching regulator, DC-DC converter

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “MY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.2.00 Sep 07, 2005 page 1 of 6

2SJ278MYTL-E Related Products

	2SJ278MYTL-E	2SJ278MYTR-E	2SJ278
Description	1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Is it Rohs certified?	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PSSO-F3	SC-62, UPAK -3	SMALL OUTLINE, R-PSSO-F3
Contacts	4	4	3
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	1 A	1 A	1 A
Maximum drain current (ID)	1 A	1 A	1 A
Maximum drain-source on-resistance	1.2 Ω	1.2 Ω	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	1 W	1 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Brand Name	Renesas	Renesas	-
Parts packaging code	UPAK	UPAK	-
Manufacturer packaging code	PLZZ0004CA-A4	PLZZ0004CA-A4	-
Humidity sensitivity level	1	-	1

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