1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 1 A |
| Maximum drain current (ID) | 1 A |
| Maximum drain-source on-resistance | 1.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-F3 |
| JESD-609 code | e6 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Bismuth (Sn/Bi) |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SJ278 | 2SJ278MYTR-E | 2SJ278MYTL-E | |
|---|---|---|---|
| Description | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| Is it Rohs certified? | conform to | conform to | conform to |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SC-62, UPAK -3 | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 | 4 | 4 |
| Reach Compliance Code | compli | compli | compli |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V |
| Maximum drain current (Abs) (ID) | 1 A | 1 A | 1 A |
| Maximum drain current (ID) | 1 A | 1 A | 1 A |
| Maximum drain-source on-resistance | 1.2 Ω | 1.2 Ω | 1.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | 260 |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power dissipation(Abs) | 1 W | 1 W | 1 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| Humidity sensitivity level | 1 | - | 1 |
| Brand Name | - | Renesas | Renesas |
| Parts packaging code | - | UPAK | UPAK |
| Manufacturer packaging code | - | PLZZ0004CA-A4 | PLZZ0004CA-A4 |
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