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NDS8410AL86Z

Description
Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
CategoryDiscrete semiconductor    The transistor   
File Size266KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

NDS8410AL86Z Overview

Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

NDS8410AL86Z Parametric

Parameter NameAttribute value
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)10.8 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
March 1997
NDS8410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
10.8 A, 30 V. R
DS(ON)
= 0.012
@ V
GS
= 10 V
R
DS(ON)
= 0.017
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________
5
6
7
8
4
3
2
1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDS8410A
30
±20
10.8
50
2.5
1.2
1
-55 to 150
Units
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS8410A Rev.C1

NDS8410AL86Z Related Products

NDS8410AL86Z NDS8410AF011 NDS8410AD84Z
Description Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 10.8A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Parts packaging code SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 SOIC-8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 8 8
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (ID) 10.8 A 10.8 A 10.8 A
Maximum drain-source on-resistance 0.012 Ω 0.012 Ω 0.012 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 1 1 1
Number of terminals 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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