HUR3060PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A
C(TAB)
A
C
A
C
A
Dimensions TO-247AD
Dim.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
HUR3060PT
V
RSM
V
600
V
RRM
V
600
L
M
N
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=140 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=1A; L=180uH
V
A
=1.5
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
35
2 x 15
110
0.1
0.1
-55...+175
175
-55...+150
95
0.4...0.6
2
Unit
A
A
mJ
A
o
C
W
Nm
g
HUR3060PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=150
o
C; V
R
=V
RRM
I
F
=15A; T
VJ
=150
o
C
T
VJ
=25
o
C
Test Conditions
Characteristic Values
typ.
max.
100
0.5
1.35
2.04
1.6
0.5
Unit
uA
mA
V
K/W
ns
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
I
F
=1A; -di/dt=100A/us; V
R
=30V; T
VJ
=25
o
C
V
R
=100V; I
F
=25A; -di
F
/dt=100A/us; T
VJ
=100
o
C
35
4.9
A
FEATURES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
HUR3060PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
A
I
F
30
2000
T
VJ
= 100°C
V
R
= 300V
nC
40
A
30
I
RM
T
VJ
= 100°C
V
R
= 300V
1500
T
VJ
=150°C
T
VJ
=100°C
20
Q
r
1000
T
VJ
= 25°C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
20
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
10
500
10
0
0
1
V
F
2
V
0
100
0
A/us 1000
-di
F
/dt
0
200
400
600 A/us 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
120
ns
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
20
2.0
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
I
F
= 15A
1.6
V
FR
us
t
fr
1.2
1.5
K
f
1.0
t
rr
110
V
FR
15
100
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
t
fr
10
0.8
I
RM
0.5
90
Q
r
80
5
0.4
0.0
0
40
80
120 °C 160
T
VJ
70
0
200
400
600
-di
F
/dt
800
A/us 1000
0
0
200
400
0.0
600 A/us 1000
800
di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
10
K/W
1
Z
thJC
0.1
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.908
0.35
0.342
t
i
(s)
0.0052
0.0003
0.017
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
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