Technical Data Sheet
5mm Infrared LED, T-1 3/4
IR333/H0
Features
․High
reliability
․2.54mm
lead spacing
․Low
forward voltage
․Good
spectral matching
to Si photodetector
․High
radiant intensity
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
EVERLIGHT’s infrared emitting diode (IR333/H0)
is a high intensity diode, molded in a blue transparent plastic
package.
The device is spectrally matched with phototransistor, photodiode
and infrared receive module.
Applications
․Free
air transmission system
․Optoelectronic
switch
․Floppy
disk drive
․Infrared
applied system
․Smoke
detector
Device Selection Guide
LED Part No.
IR
Chip
Material
GaAlAs
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No：DIR-033-005
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 3
Page: 1 of 7
Prepared by：David Huang
IR333/H0
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
*2
Power Dissipation at(or below)
25℃Free Air Temperature
*1
Symbol
I
F
I
FP
V
R
T
opr
T
stg
T
sol
P
d
Rating
100
1.0
5
-40 ~ +85
-40 ~ +85
260
150
Units
mA
A
V
℃
℃
℃
mW
Notes:
*1:I
FP
Conditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DIR-033-005
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 3
Page: 2 of 7
Prepared by：David Huang
IR333/H0
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Condition
I
F
=20mA
I
F
=100mA
Radiant Intensity
E
e
Pulse Width≦100μs and Duty≦1%
Min.
5.6
--
--
--
--
--
--
--
--
--
Typ. Max.
7.8
35
350
940
45
1.2
1.4
2.6
--
40
--
--
--
--
--
1.5
1.8
4.0
10
--
Units
mW/sr
I
F
=1A
Pulse Width≦100μs and Duty≦1%
Peak Wavelength
Spectral Bandwidth
λp
Δλ
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=100mA
nm
nm
Forward Voltage
V
F
Pulse Width≦100μs and Duty≦1%
V
I
F
=1A
Pulse Width≦100μs and Duty≦1%
Reverse Current
View Angle
I
R
2θ1/2
V
R
=5V
I
F
=20mA
μA
deg
Rank
Condition：I
F
=20mA
Unit：mW/sr
Bin Number
Min
Max
L
5.60
8.90
M
7.80
12.50
N
11.00
17.60
Everlight Electronics Co., Ltd.
Device No：DIR-033-005
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 3
Page: 3 of 7
Prepared by：David Huang
IR333/H0
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
140
120
Fig.2 Spectral Distribution
100
80
I
F
=20mA
Ta=25° C
100
80
60
40
20
0
60
40
20
0
-40 -20 0
20
40
60
80
100
Fig.3 Peak Emission Wavelength
Ambient Temperature
980
Fig.4 Forward Current
vs. Forward Voltage
4
10
960
3
10
940
2
10
920
900
-25
1
10
0
25
50
75
100
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DIR-033-005
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 3
Page: 4 of 7
Prepared by：David Huang
IR333/H0
Typical Electro-Optical Characteristics Curves
Fig.5 Relative Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
Ie-Radiant Intensity(mW/sr)
-20
-10
0
10
20
30
100
1.0
10
40
50
60
70
80
0.6 0.4 0.2
0
0.2 0.4 0.6
0.9
0.8
0.7
1
10
0
10
1
10
2
10
3
10
4
I
F
-Forward Current (mA
)
Fig.7 Relative Intensity vs.
Ambient Temperature(°C)
Fig.8 Forward Voltage vs.
Ambient Temperature(°C)
15
I
F
=20mA
1.3
10
1.2
I
F
=20mA
5
1.1
0
25
50
75
100
120
1
25
50
75
100
120
Everlight Electronics Co., Ltd.
Device No：DIR-033-005
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 3
Page: 5 of 7
Prepared by：David Huang
京公网安备 11010802033920号
EEWORLD
