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ET191

Description
Power Bipolar Transistor, 12A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size108KB,3 Pages
ManufacturerFuji Electric Co., Ltd.
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ET191 Overview

Power Bipolar Transistor, 12A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

ET191 Parametric

Parameter NameAttribute value
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Maximum collector current (IC)12 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment100 W
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)17000 ns
Maximum opening time (tons)1500 ns
Base Number Matches1
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