HUF75307D3S datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> HUF75307D3S

HUF75307D3S: Description13A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size931KB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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HUF75307D3S Overview

13A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

HUF75307D3S Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	NOT SPECIFIED
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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