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ML4341-118

Description
40V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

ML4341-118 Overview

40V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

ML4341-118 Parametric

Parameter NameAttribute value
package instructionO-CUPM-N1
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage40 V
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CUPM-N1
Number of terminals1
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
surface mountNO
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
Base Number Matches1
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