HY5RS573225FP-14 datasheet, PDF

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HY5RS573225FP-14: DescriptionDDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144; Categorystorage storage; File Size1MB，63 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5RS573225FP-14 Overview

DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144

HY5RS573225FP-14 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	LFBGA, BGA144,12X12,32
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.26 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	700 MHz
I/O type	COMMON
JESD-30 code	S-PBGA-B144
length	12 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	144
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	8MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA144,12X12,32
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	2 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.3 mm
self refresh	YES
Continuous burst length	4
Maximum standby current	0.03 A
Maximum slew rate	1.2 mA
Maximum supply voltage (Vsup)	2.1 V
Minimum supply voltage (Vsup)	1.9 V
Nominal supply voltage (Vsup)	2 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	12 mm
Base Number Matches	1

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HY5RS573225F(P)

256M (8Mx32) GDDR3 SDRAM

HY5RS573225F(P)

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.1 / Sep. 2005

HY5RS573225FP-14 Related Products

	HY5RS573225FP-14	HY5RS573225FP-22	HY5RS573225FP-2	HY5RS573225FP-13	HY5RS573225FP-18	HY5RS573225FP-12	HY5RS573225FP-15	HY5RS573225FP-16
Description	DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32
Contacts	144	144	144	144	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.26 ns	0.3 ns	0.3 ns	0.25 ns	0.28 ns	0.25 ns	0.26 ns	0.28 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	700 MHz	450 MHz	500 MHz	750 MHz	550 MHz	800 MHz	650 MHz	600 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144
length	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	144	144	144	144	144	144	144	144
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
organize	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
power supply	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096
Maximum seat height	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	4	4	4	4	4	4	4	4
Maximum standby current	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
Maximum slew rate	1.2 mA	0.95 mA	1 mA	1.25 mA	1.05 mA	1.3 mA	1.15 mA	1.1 mA
Maximum supply voltage (Vsup)	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V
Minimum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Nominal supply voltage (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	20	20	20	20	20	20
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
Maker	-	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix

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