EEWORLDEEWORLDEEWORLD

Part Number

Search

HY5RS573225FP-2

Description
DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144
Categorystorage    storage   
File Size1MB,63 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
Download Datasheet Parametric Compare View All

HY5RS573225FP-2 Overview

DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144

HY5RS573225FP-2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionLFBGA, BGA144,12X12,32
Contacts144
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.3 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)500 MHz
I/O typeCOMMON
JESD-30 codeS-PBGA-B144
length12 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals144
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize8MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA144,12X12,32
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply2 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.3 mm
self refreshYES
Continuous burst length4
Maximum standby current0.03 A
Maximum slew rate1 mA
Maximum supply voltage (Vsup)2.1 V
Minimum supply voltage (Vsup)1.9 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width12 mm
Base Number Matches1
HY5RS573225F(P)
256M (8Mx32) GDDR3 SDRAM
HY5RS573225F(P)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1 / Sep. 2005
1

HY5RS573225FP-2 Related Products

HY5RS573225FP-2 HY5RS573225FP-22 HY5RS573225FP-14 HY5RS573225FP-13 HY5RS573225FP-18 HY5RS573225FP-12 HY5RS573225FP-15 HY5RS573225FP-16
Description DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA
package instruction LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32
Contacts 144 144 144 144 144 144 144 144
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.3 ns 0.3 ns 0.26 ns 0.25 ns 0.28 ns 0.25 ns 0.26 ns 0.28 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 500 MHz 450 MHz 700 MHz 750 MHz 550 MHz 800 MHz 650 MHz 600 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144
length 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 32 32 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 144 144 144 144 144 144 144 144
word count 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000 8000000 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
organize 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
Encapsulate equivalent code BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260
power supply 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096 4096 4096 4096 4096
Maximum seat height 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm
self refresh YES YES YES YES YES YES YES YES
Continuous burst length 4 4 4 4 4 4 4 4
Maximum standby current 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
Maximum slew rate 1 mA 0.95 mA 1.2 mA 1.25 mA 1.05 mA 1.3 mA 1.15 mA 1.1 mA
Maximum supply voltage (Vsup) 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V
Minimum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Nominal supply voltage (Vsup) 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 20 20 20 20 20 20 20 20
width 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
Maker - SK Hynix - SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号