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UPD44165084F5-E33-EQ1

Description
QDR SRAM, 2MX8, 0.29ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165
Categorystorage    storage   
File Size219KB,32 Pages
ManufacturerNEC Electronics
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UPD44165084F5-E33-EQ1 Overview

QDR SRAM, 2MX8, 0.29ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165

UPD44165084F5-E33-EQ1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time0.29 ns
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density16777216 bit
Memory IC TypeQDR SRAM
memory width8
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1
PRELIMINARY DATA SHEET
µ
PD44165084, 44165184, 44165364
18M-BIT QDR
TM
II SRAM
4-WORD BURST OPERATION
MOS INTEGRATED CIRCUIT
Description
The
µ
PD44165084 is a 2,097,152-word by 8-bit, the
µ
PD44165184 is a 1,048,576-word by 18-bit and the
µ
PD44165364
is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full
CMOS six-transistor memory cell.
The
µ
PD44165084,
µ
PD44165184 and
µ
PD44165364 integrates unique synchronous peripheral circuitry and a
burst counter. All input registers controlled by an input clock pair (K and /K) and are latched on the positive edge of K
and /K.
These products are suitable for applications which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC FBGA.
Features
1.8 ± 0.1 V power supply and HSTL I/O
DLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability with
µ
s restart
User programmable impedence output
Fast clock cycle time : 3.0 ns (333 MHz), 3.3 ns (300 MHz), 4.0 ns (250 MHz) , 5.0 ns (200 MHz) , 6.0 ns (167 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15825EJ2V0DS00 (2nd edition)
Date Published April 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
2001

UPD44165084F5-E33-EQ1 Related Products

UPD44165084F5-E33-EQ1 UPD44165364F5-E30-EQ1 UPD44165084F5-E30-EQ1 UPD44165364F5-E33-EQ1 UPD44165184F5-E33-EQ1 UPD44165184F5-E30-EQ1
Description QDR SRAM, 2MX8, 0.29ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 QDR SRAM, 512KX36, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 QDR SRAM, 2MX8, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 QDR SRAM, 512KX36, 0.29ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 QDR SRAM, 1MX18, 0.29ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 QDR SRAM, 1MX18, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction BGA, BGA, BGA, BGA, BGA, BGA,
Contacts 165 165 165 165 165 165
Reach Compliance Code compliant compliant compliant compliant compliant compli
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maker - - NEC Electronics NEC Electronics NEC Electronics NEC Electronics
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