MT4HTF12864HIZ-800XX datasheet, PDF

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MT4HTF12864HIZ-800XX: DescriptionDDR DRAM Module, 128MX64, CMOS, SODIMM-200; Categorystorage storage; File Size334KB，15 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT4HTF12864HIZ-800XX Overview

DDR DRAM Module, 128MX64, CMOS, SODIMM-200

MT4HTF12864HIZ-800XX Parametric

Parameter Name	Attribute value
Parts packaging code	SODIMM
package instruction	DIMM,
Contacts	200
Reach Compliance Code	compliant
Is Samacsys	N
access mode	SINGLE BANK PAGE BURST
Other features	SELF REFRESH; WD-MAX
JESD-30 code	R-XZMA-N200
JESD-609 code	e4
length	67.6 mm
memory density	8589934592 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
Maximum seat height	30.15 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	ZIG-ZAG
width	2.45 mm
Base Number Matches	1

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256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM

Features

DDR2 SDRAM SODIMM

MT4HTF3264HZ – 256MB

MT4HTF6464HZ – 512MB

MT4HTF12864HZ – 1GB

Features

•

200-pin, small-outline dual in-line memory module

(SODIMM)

•

Fast data transfer rates: PC2-3200, PC2-4200,

PC2-5300, or PC2-6400

•

256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB

(128 Meg x 64)

•

= V

DDQ

= 1.8V

•

DDSPD

= 1.7–3.6V

•

JEDEC-standard 1.8V I/O (SSTL_18-compatible)

•

Differential data strobe (DQS, DQS#) option

•

4n-bit prefetch architecture

•

Multiple internal device banks for concurrent opera-

tion

•

Programmable CAS latency (CL)

•

Posted CAS additive latency (AL)

•

WRITE latency = READ latency - 1

•

Programmable burst lengths (BL): 4 or 8

•

Adjustable data-output drive strength

•

64ms, 8192-cycle refresh

•

On-die termination (ODT)

•

Halogen-free

•

Serial presence detect (SPD) with EEPROM

•

Gold edge contacts

•

Single rank

Table 1: Key Timing Parameters

Speed

Grade

-80E

-800

-667

-53E

-40E

Industry

Nomenclature

PC2-6400

PC2-5300

PC2-4200

PC2-3200

Data Rate (MT/s)

CL = 6

800

–

CL = 5

800

667

–

CL = 4

533

553

400

CL = 3

400

RCD

Figure 1: 200-Pin SODIMM (MO-224 R/C C)

Module height: 30mm (1.181in)

Options

•

Operating temperature

–

Commercial (0°C

≤

+70°C)

–

Industrial (–40°C

≤

+85°C)

•

Package

–

200-pin DIMM (halogen-free)

•

Frequency/CL

–

2.5ns @ CL = 5 (DDR2-800)

–

2.5ns @ CL = 6 (DDR2-800)

–

3.0ns @ CL = 5 (DDR2-667)

Notes:

Marking

None

-80E

-800

-667

1. Contact Micron for industrial temperature

module offerings.

2. CL = CAS (READ) latency.

(ns)

12.5

(ns)

12.5

(ns)

PDF: 09005aef83c05a5d

htf4c32_64_128x64hz.pdf - Rev. C 9/10 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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