TrenchT2
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
IXFA76N15T2
IXFP76N15T2
IXFH76N15T2
V
DSS
I
D25
R
DS(on)
TO-263
(IXFA)
= 150V
= 76A
22m
G
S
D (Tab)
TO-220
(IXFP)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
,, V
DD
V
DSS
,T
J
175C
T
C
= 25C
Maximum Ratings
150
150
20
30
76
200
38
500
15
350
-55 ... +175
175
-55 ... +175
300
260
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
G
D
G
D
S
D (Tab)
TO-247
(IXFH)
S
D
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Features
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
Dynamic dv/dt Rated
Low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
150
2.5
4.5
V
V
Easy to Mount
Space Savings
High Power Density
Applications
200
nA
5
A
750
A
22 m
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100176C(11/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA76N15T2 IXFP76N15T2
IXFH76N15T2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-247
0.50
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
50
80
5800
490
85
17
19
25
14
97
29
30
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.43
C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 38A, V
GS
= 0V, Note 1
I
F
= 38A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 75V
69
5.7
197
Characteristic Values
Min. Typ.
Max.
76
300
1.5
A
A
V
ns
A
nC
Notes: 1.
Pulse test, t
300s, duty cycle, d
2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact location must be 5mm
or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA76N15T2 IXFP76N15T2
IXFH76N15T2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
80
70
60
V
GS
= 15V
10V
7V
160
240
V
GS
= 15V
10V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
200
I
D
- Amperes
I
D
- Amperes
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
6V
7V
120
80
6V
40
5V
0
0
2
4
6
5V
8
10
12
14
16
18
20
22
24
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150
o
C
80
70
60
V
GS
= 15V
10V
7V
3.4
3.0
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 38A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
6V
I
D
= 76A
2.2
1.8
1.4
1.0
0.6
I
D
= 38A
I
D
- Amperes
50
40
30
20
10
4V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5V
0.2
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
4.6
4.2
3.8
Fig. 5. R
DS(on)
Normalized to I
D
= 38A Value vs.
Drain Current
V
GS
= 10V
T
J
= 175 C
o
Fig. 6. Drain Current vs. Case Temperature
80
70
60
R
DS(on)
- Normalized
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
20
40
60
80
100
120
140
160
180
200
220
10
0
-50
-25
0
25
50
75
100
125
150
175
T
J
= 25 C
o
I
D
- Amperes
I
D
- Amperes
50
40
30
20
T
C
- Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA76N15T2 IXFP76N15T2
IXFH76N15T2
Fig. 7. Input Admittance
140
120
100
T
J
= 150 C
- 40 C
o
o
Fig. 8. Transconductance
140
120
100
T
J
= - 40 C
o
I
D
- Amperes
80
60
40
20
0
3.5
4.0
4.5
5.0
g
f s
- Siemens
25 C
o
25 C
o
80
150 C
60
40
20
0
o
5.5
6.0
6.5
7.0
0
20
40
60
80
100
120
140
160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240
10
9
200
8
7
V
DS
= 75V
I
D
= 38A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
160
V
GS
- Volts
T
J
= 150 C
120
T
J
= 25 C
o
o
6
5
4
3
2
1
80
40
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
0
10
20
30
40
50
60
70
80
90
100
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Ciss
1000
Fig. 12. Forward-Bias Safe Operating Area
R
DS
(on) Limit
100
25μs
Capacitance - PicoFarads
I
D
- Amperes
1,000
100μs
10
Coss
100
Crss
1
1ms
T
J
= 175 C
T
C
= 25 C
Single Pulse
o
o
10ms
DC
f
= 1 MHz
10
0
5
10
15
20
25
30
35
40
0.1
1
10
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA76N15T2 IXFP76N15T2
IXFH76N15T2
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
22
R
G
= 5Ω , V
GS
= 10V
21
V
DS
= 75V
21
22
R
G
= 5Ω , V
GS
= 10V
V
DS
= 75V
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
t
r
- Nanoseconds
20
I
D
= 152A
t
r
- Nanoseconds
20
T
J
= 125 C
o
19
19
T
J
= 25 C
o
18
I
D
= 76A
17
18
16
25
35
45
55
65
75
85
95
105
115
125
17
30
40
50
60
70
80
90
100
110
120
130
140
150
160
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
22
20
16.0
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
30
t
r
21
o
t
d(on)
19
15.5
t
f
V
DS
= 75V
t
d(off)
T
J
= 125 C, V
GS
= 10V
V
DS
= 75V
R
G
= 5Ω, V
GS
= 10V
28
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
20
18
t
f
- Nanoseconds
15.0
26
19
17
14.5
24
18
I
D
= 76A, 152A
16
14.0
I
D
= 76A, 152A
13.5
22
17
15
20
16
4
6
8
10
12
14
16
18
20
14
13.0
25
35
45
55
65
75
85
95
105
115
18
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
18
17
16
34
17
16
15
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
30
t
f
V
DS
= 75V
t
d(off)
R
G
= 5Ω, V
GS
= 10V
32
30
28
26
t
f
o
t
d(off)
T
J
= 125 C, V
GS
= 10V
V
DS
= 75V
29
28
27
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
15
14
T
J
= 125 C
o
14
I
D
= 152A
13
12
11
10
4
6
8
10
12
14
16
18
20
I
D
= 76A
26
25
24
23
T
J
= 25 C
13
12
11
30
40
50
60
70
80
90
24
22
20
100 110 120 130 140 150 160
o
I
D
- Amperes
R
G
- Ohms
© 2018 IXYS CORPORATION, All Rights Reserved
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