SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BCW61BLT1
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
-32
-32
-5
-100
225
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Noise Figure
Symbol
BVceo
BVebo
Hfe
Vce(sat)
Vbe(sat)
Vbe(on)
Cob
NF
-0.68
-0.6
Min
-32
-5
140
310
-0.55
-1.05
-0.75
6
6
V
V
V
PF
dB
Max
Unit
V
V
Test Conditions
Ic= -2mA
Ie= -1uA
Ib=0
Ic=0
Vce= -5V Ic= -2mA
Ic= -50mA Ib= -1.25mA
Ic= -50mA Ib= -1.25mA
Vce= -5V Ic= -2mA
Vcb= -10V Ie=0 f=1MHz
Vce= -5V Ic= -0.2mA
F=1KHz Rs=2KΩ
I
C
= – 10 mAdc
I
B1
= – 1.0 mAdc
I
B2
= –1.0mAdc, V
BB
= –3.6 Vdc,
R
1
= R
2
=5.0KΩ, R
L
= 990Ω
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
t
on
t
off
—
150
800
ns
ns
—
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle≤ 2%
DEVICE MARKING:
BCW61BLT1=BB
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６１ＬT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６１ＬＴ１
TYPICAL NOISE CHARACTERISTICS
(V
CE
= –5.0 Vdc, T
A
= 25°C)
10
1.0
BANDWIDTH = 1.0 Hz
~
R ~0
7.0
5.0
BANDWIDTH = 1.0 Hz
~
R
S
~
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
7.0
S
I
C
=10
µA
30µA
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
I
C
=1.0mA
300µA
100µA
30µA
10µA
10
20
50
100
200
500
1.0k
2.0k
5.0k
10 k
5.0
3.0
1.0mA
2.0
100µA
300µA
1.0
10
20
50
100
200
500 1.0k
2.0k
5.0k
10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= –5.0 Vdc, T
A
= 25°C)
1.0M
1.0M
R
S
, SOURCE RESISTANCE (
Ω
)
R
S
, SOURCE RESISTANCE (
Ω
)
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
BANDWIDTH = 1.0 Hz
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0dB
200
300
500 700 1.0K
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
300
500 700 1.0K
I
C
, COLLECTOR CURRENT (µA)
I
C
, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0M
Figure 4. Narrow Band, 1.0 kHz
R
S
, SOURCE RESISTANCE (
Ω
)
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
10 Hz to 15.7KHz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
300
500 700 1.0K
I
C
, COLLECTOR CURRENT (µA)
Figure 5. Wideband
8
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６１ＬT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６１ＬＴ１
TYPICAL STATIC CHARACTERISTICS
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
0.8
T
A
= 25°C
BCW61
I
C
= 1.0 mA
10 mA
50 mA
100 mA
I
C
, COLLECTOR CURRENT (mA)
1.0
100
80
T
A
= 25°C
PULSE WIDTH =300
µs
DUTY CYCLE<2.0%
300µA
I
B
= 400
µA
350µA
250µA
200µA
150µA
0.6
60
0.4
40
100µA
50
µA
0.2
20
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
0
0
5.0
10
15
20
25
30
35
40
I
B
, BASE CURRENT (mA)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Saturation Region
θ
V
, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
1.6
Figure 7. Collector Characteristics
T
J
= 25°C
1.2
*APPLIES for I
C
/ I
B
< h
FE
/ 2
0.8
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
∗ θ
VC
for V
CE(sat)
0
25°C to 125°C
–55°C to 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
–0.8
25°C to 125°C
–1.6
V
CE(sat)
@ I
C
/I
B
= 10
θ
VB
for V
BE
–55°C to 25°C
–2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６１ＬT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６１ＬＴ１
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
1000
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
700
500
300
200
100
t
s
V
CC
= –3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
t, TIME (ns)
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
70
50
30
20
10
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
t
f
t
d
@ V
BE(off)
= 0.5 V
t
f
I
C
, COLLECTOR CURRENT (mA)
f
T
, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
500
10.0
Figure 11. Turn–Off Time
T
J
= 25°C
300
T
J
= 25°C
V
CE
=20 V
5.0 V
C, CAPACITANCE (pF)
7.0
C
ib
5.0
200
3.0
100
2.0
C
ob
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
Figure 13. Capacitance
D = 0.5
0.2
0.1
FIGURE 19A
0.05
P
(pk)
0.02
0.01
t
SINGLE PULSE
1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN–569)
t
2
Z
θJA(t)
= r(t) • R
θJA
T
J(pk)
– T
A
= P
(pk)
Z
θJA(t)
1.0k
2.0k
5.0k
10k
20k
50k
100k
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
Figure 14. Thermal Response
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６１ＬT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６１ＬＴ１
10
4
V
CC
= 30 V
10
3
I
C
, COLLECTOR CURRENT (nA)
I
CEO
10
2
10
1
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
10
0
10
–1
10
–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
PCB Design
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