|
BS108/E6 |
BS108/E7 |
Description |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Is it Rohs certified? |
incompatible |
incompatible |
Maker |
Vishay |
Vishay |
Reach Compliance Code |
unknown |
unknown |
Configuration |
Single |
Single |
Maximum drain current (Abs) (ID) |
0.23 A |
0.23 A |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-609 code |
e0 |
e0 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
150 °C |
150 °C |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
0.83 W |
0.83 W |
surface mount |
NO |
NO |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |