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BS108/E7

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size203KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BS108/E7 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BS108/E7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.23 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.83 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

BS108/E7 Related Products

BS108/E7 BS108/E6
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible incompatible
Maker Vishay Vishay
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 0.23 A 0.23 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.83 W 0.83 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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