ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Pyramid Semiconductor Corporation |
Parts packaging code | DIP |
package instruction | DIP, DIP18,.3 |
Contacts | 18 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Maximum access time | 15 ns |
I/O type | COMMON |
JESD-30 code | R-PDIP-T18 |
JESD-609 code | e0 |
length | 22.86 mm |
memory density | 4096 bi |
Memory IC Type | STANDARD SRAM |
memory width | 4 |
Number of functions | 1 |
Number of terminals | 18 |
word count | 1024 words |
character code | 1000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1KX4 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIP |
Encapsulate equivalent code | DIP18,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
Maximum seat height | 5.334 mm |
Maximum standby current | 0.12 A |
Minimum standby current | 4.5 V |
Maximum slew rate | 0.12 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 7.62 mm |