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IRG4BC15UD-STRLPBF

Description
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size318KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRG4BC15UD-STRLPBF Overview

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

IRG4BC15UD-STRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)14 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)400 ns
Nominal on time (ton)37 ns
Base Number Matches1
PD - 95781
IRG4BC15UD-SPbF
IRG4BC15UD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
V
CES
= 600V
Features
•
UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard D
2
Pak & TO-262 packages
• Lead-Free
G
E
V
CE(on) typ.
= 2.02V
@V
GE
= 15V, I
C
= 7.8A
Benefits
•
Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
n-channel
D
2
Pak
IRG4BC15UD-S
TO-262
IRG4BC15UD-L
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
14
7.8
42
42
4.0
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
…
Junction-to-Ambient (PCB Mount, steady state)
†
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
2 (0.07)
Max.
2.7
7.0
–––
80
40
–––
Units
°C/W
g (oz)
www.irf.com
1
08/27/04

IRG4BC15UD-STRLPBF Related Products

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Description Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 14 A, 600 V, N-CHANNEL IGBT, TO-262 14 A, 600 V, N-CHANNEL IGBT, TO-262 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Parts packaging code D2PAK TO-262 D2PAK D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3 3
Reach Compliance Code unknown compli compli unknown compliant
Is Samacsys N N N N N
Maximum collector current (IC) 14 A 14 A 14 A 14 A 14 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0 e0 e3 e0
Number of components 1 1 1 1 1
Number of terminals 2 3 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225 225 NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES YES YES
Terminal surface MATTE TIN Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN TIN LEAD
Terminal form GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30 30 NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal off time (toff) 400 ns 400 ns 400 ns 400 ns 400 ns
Nominal on time (ton) 37 ns 37 ns 37 ns 37 ns 37 ns
Base Number Matches 1 1 1 1 1
Is it lead-free? Lead free - - Lead free Contains lead
Shell connection COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
Is it Rohs certified? - incompatible incompatible - incompatible
Humidity sensitivity level - 1 1 - 1
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