IRG4BC15UD-S datasheet, PDF - EEWORLD Datasheet

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IRG4BC15UD-S: Description14 A, 600 V, N-CHANNEL IGBT, TO-262; CategoryDiscrete semiconductor The transistor; File Size318KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRG4BC15UD-S Overview

14 A, 600 V, N-CHANNEL IGBT, TO-262

IRG4BC15UD-S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	14 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	19 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	400 ns
Nominal on time (ton)	37 ns
Base Number Matches	1

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PD - 95781

IRG4BC15UD-SPbF

IRG4BC15UD-LPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

UltraFast CoPack IGBT

CES

= 600V

Features

UltraFast: Optimized for high frequencies from10 to

30 kHz in hard switching

• IGBT Co-packaged with ultra-soft-recovery

antiparallel diode

• Industry standard D

Pak & TO-262 packages

• Lead-Free

CE(on) typ.

= 2.02V

= 15V, I

= 7.8A

Benefits

Best Value for Appliance and Industrial Applications

• High noise immune "Positive Only" gate drive-

Negative bias gate drive not necessary

• For Low EMI designs- requires little or no snubbing

• Single Package switch for bridge circuit applications

• Compatible with high voltage Gate Driver IC's

• Allows simpler gate drive

n-channel

Pak

IRG4BC15UD-S

TO-262

IRG4BC15UD-L

Absolute Maximum Ratings

Parameter

CES

@ T

= 25°C

@ T

= 100°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Max.

600

7.8

4.0

± 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

Units

°C

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, steady state)

Weight

Min.

–––

Typ.

–––

0.50

–––

2 (0.07)

Max.

2.7

7.0

–––

Units

°C/W

g (oz)

www.irf.com

08/27/04

IRG4BC15UD-S Related Products

	IRG4BC15UD-S	IRG4BC15UD-L	IRG4BC15UD-STRLPBF	IRG4BC15UD-STRRPBF	IRG4BC15UD-STRR
Description	14 A, 600 V, N-CHANNEL IGBT, TO-262	14 A, 600 V, N-CHANNEL IGBT, TO-262	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Parts packaging code	D2PAK	TO-262	D2PAK	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3	3
Reach Compliance Code	compli	compli	unknown	unknown	compliant
Is Samacsys	N	N	N	N	N
Maximum collector current (IC)	14 A	14 A	14 A	14 A	14 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V	600 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e3	e3	e0
Number of components	1	1	1	1	1
Number of terminals	2	3	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	225	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN	MATTE TIN	TIN LEAD
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal off time (toff)	400 ns	400 ns	400 ns	400 ns	400 ns
Nominal on time (ton)	37 ns	37 ns	37 ns	37 ns	37 ns
Base Number Matches	1	1	1	1	1
Is it Rohs certified?	incompatible	incompatible	-	-	incompatible
Shell connection	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR
Humidity sensitivity level	1	1	-	-	1
Is it lead-free?	-	-	Lead free	Lead free	Contains lead

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