BAS16 datasheet, PDF - EEWORLD Datasheet

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BAS16: DescriptionReverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 300mA, trr=6ns, VF=1.25 V@150mA,PD=225mW; CategoryDiscrete semiconductor Switching diode; File Size868KB，2 Pages; ManufacturerShenzhen HT Semiconductor Co., Ltd.; Websitehttp://www.htsemi.com/; Shenzhen Jinyu Semiconductor Co., Ltd. is a manufacturing factory under Shenzhen Jinyu Semiconductor Group. It mainly produces semiconductor discrete components, MOS tubes, and general integrated circuits. The company's main products include TO, SOD, SOT, SOP, and TSSOP series. The company enthusiastically provides semiconductor packaging, processing, and testing services to customers. The factory has advanced equipment, a beautiful environment, and focuses on employee capacity improvement and training. Through years of persistent efforts by all staff, it has developed into one of China's largest semiconductor production and manufacturing bases.

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Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 300mA, trr=6ns, VF=1.25 V@150mA,PD=225mW

BAS16 Parametric

Parameter Name	Attribute value
Reverse recovery time (trr)	6ns
DC reverse withstand voltage (Vr)	75V
Average rectified current (Io)	150mA
Forward voltage drop (Vf)	1.25V @ 150mA

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