Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - pre-biased
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | ROHM Semiconductor |
| Parts packaging code | SC-59 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 13 weeks |
| Samacsys Description | Digital NPN transistor array,DTC123JKA ROHM, DTC123JKAT146 NPN Digital Transistor, 100 mA 50 V 2.2 kΩ, Ratio Of 0.047, 3-Pin SMT |
| Other features | BUILT-IN BIAS RESISTOR RATIO IS 21 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 80 |
| JESD-30 code | R-PDSO-G3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| VCEsat-Max | 0.3 V |
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