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DAN202UT106

Description
Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 80V Average rectified current (Io): 100mA Forward voltage drop (Vf): 1.2V @ 100mA
CategoryDiscrete semiconductor    diode   
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DAN202UT106 Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 80V Average rectified current (Io): 100mA Forward voltage drop (Vf): 1.2V @ 100mA

DAN202UT106 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Confidence2
Samacsys StatusReleased
Samacsys PartID939133
Samacsys Pin Count3
Samacsys Part CategoryDiode
Samacsys Package CategoryOther
Samacsys Footprint NameUMD3 (SC-70)
Samacsys Released Date2018-09-05 16:01:35
Is SamacsysN
Other featuresHIGH RELIABILITY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
DAN202U
Switching Diode (High speed switching)
Data sheet
     
 
                                                 
Outline
V
RM
I
FM
I
o
I
FSM
80
300
100
4000
V
mA
mA
mA
 
 
 
 
 
 
 
 
  
Features
High reliability
Small mold type
High Speed switching
Application
High speed switching
Structure
Epitaxial planar
Absolute Maximum Ratings (T
a
= 25ºC)
ec
N
ew om
m
D
es en
ig de
ns d
f
Inner Circuit
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
180
T
aping Width(mm)
8
Basic Ordering Unit(pcs)
3000
T
aping Code
T106
Marking
N
Parameter
Symbol
V
R
V
RM
I
o
I
FM
I
FSM
P
D
T
j
T
stg
Conditions
-
-
-
-
t=1μs
-
-
-
N
Reverse voltage
Repetitive peak reverse voltage
Average rectified forward current
Forward current
Peak forward surge current
Power dissipation
*
   
Junction temperature
Storage temperature
ot
R
or
Limits
80
80
100
300
4000
200
150
-55
½
150
  
Unit
V
V
mA
mA
mA
mW
*2 elements total
Value per element
-
-
-
-
1.2
0.1
3.5
4.0
V
μA
pF
ns
Characteristics (T
a
= 25ºC)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Caution
static electricity
Symbol
V
F
I
R
C
t
trr
Conditions
I
F
=100mA
V
R
=70V
V
R
=6.0V f=1.0MHz
V
R
=6.0V I
F
=5.0mA R
L
=50Ω
Min. Typ. Max. Unit
-
-
-
-
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
 
2016/03/17_Rev.002

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