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MBRF20100CTG

Description
DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 10A Forward voltage drop (Vf): 850mV @ 10A 100V, 2x10A, VF=0.85V@10A
CategoryDiscrete semiconductor    diode   
File Size89KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MBRF20100CTG Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 10A Forward voltage drop (Vf): 850mV @ 10A 100V, 2x10A, VF=0.85V@10A

MBRF20100CTG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionLEAD FREE, PLASTIC, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
Contacts3
Manufacturer packaging code221D-03
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionNULL
Other featuresFREE WHEELING DIODE
applicationPOWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
MBRF20100CT
SWITCHMODE
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
http://onsemi.com
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL 94 V−0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
These are Pb−Free Devices
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2
3
Mechanical Characteristics:
ISOLATED TO−220
CASE 221D
STYLE 3
1
2
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
3
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
November, 2012
Rev. 9
1
Publication Order Number:
MBRF20100CT/D
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