MMBT2369LT1G datasheet, PDF - EEWORLD Datasheet

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MMBT2369LT1G: DescriptionRated power: 225mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 15V Transistor type: NPN; CategoryDiscrete semiconductor The transistor; File Size130KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MMBT2369LT1G Overview

Rated power: 225mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 15V Transistor type: NPN

MMBT2369LT1G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	318-08
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	500 MHz
Maximum off time (toff)	18 ns
Maximum opening time (tons)	12 ns
Base Number Matches	1

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MMBT2369L, MMBT2369AL

Switching Transistors

NPN Silicon

Features

•

S Prefix for Automotive and Other Applications Requiring Unique

www.onsemi.com

MARKING

DIAGRAM

SOT−23

CASE 318

STYLE 6

xxx MG

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating

Collector

−Emitter

Voltage

Collector

−Emitter

Voltage

Collector

−Base

Voltage

Emitter

−Base

Voltage

Collector Current

−

Continuous

Symbol

CEO

CES

CBO

EBO

Value

4.5

200

Unit

Vdc

mAdc

xxx = M1J or 1JA

M = Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR− 5 Board

(Note 1) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Substrate, (Note 2) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

Symbol

Max

225

1.8

556

300

2.4

417

−55

to +150

Unit

mW/°C

°C/W

mW/°C

°C/W

°C

BASE

COLLECTOR

qJA

EMITTER

qJA

, T

stg

ORDERING INFORMATION

Device

MMBT2369LT1G

MMBT2369LT3G

SMMBT2369LT1G

MMBT2369ALT1G

SMMBT2369ALT1G

Package

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

Shipping

†

3,000 /

Tape & Reel

10,000 /

Tape & Reel

3,000 /

Tape & Reel

3,000 /

Tape & Reel

3,000 /

Tape & Reel

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

0.75

0.062 in.

2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

MMBT2369LT1/D

Semiconductor Components Industries, LLC, 2016

October, 2018

−

Rev. 11

MMBT2369LT1G Related Products

	MMBT2369LT1G	SMMBT2369LT1G
Description	Rated power: 225mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 15V Transistor type: NPN
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Manufacturer packaging code	318-08	318-08
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Factory Lead Time	1 week	4 weeks
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	15 V	15 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JEDEC-95 code	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.225 W	0.3 W
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	18 ns	18 ns
Maximum opening time (tons)	12 ns	12 ns

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