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LPM3413B3F

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 95mΩ @ 3A, 4.5V Maximum power dissipation (Ta =25°C): 1.4W Type: P-channel -20V, P-channel MOS
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size374KB,4 Pages
ManufacturerLowPower Semiconductor ( LPS)
Websitehttp://www.lowpowersemi.com/html/EN/ABOUT/
Download Datasheet Parametric View All

LPM3413B3F Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 95mΩ @ 3A, 4.5V Maximum power dissipation (Ta =25°C): 1.4W Type: P-channel -20V, P-channel MOS

LPM3413B3F Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C3A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance95mΩ @ 3A,4.5V
Maximum power dissipation (Ta=25°C)1.4W
typeP channel
Preliminary Datasheet
LPM3413
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM3413 uses advanced trench technology to
provide excellent R
DS(ON)
. This device is suitable for
using as a load switch or in PWM applications.
Standard Product LPM3413 is Pb-free. LPM3413 is a
Green
Product
ordering
option.
LPM3413
are
electrically identical.
Features
-20V/2.0A,R
DS(ON)
≤130mΩ(max.)@VGS=-2.5V
-20V/3A,R
DS(ON)
≤95mΩ(max.)@VGS=-4.5V
Super high density cell design for extremely low
R
DS(ON)
SOT23 Package
Applications
Order Information
LPM3413
□ □ □
F: Pb-Free
Package Type
B3: SOT23
Portable Media Players/MP3 players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Marking Information
Pin Configurations
Device
LPM3413
Marking
A1XX
Package
SOT23
Shipping
3K/REEL
Pin Description
Pin Number
1
2
3
Pin Description
Gate Pin
Source Pin
Drain Pin
LPM3413-01
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
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