IRFS4227TRLPBF datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IRFS4227TRLPBF

IRFS4227TRLPBF: DescriptionDrain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 62A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 26mΩ @ 46A, 10V Maximum power dissipation (Ta=25°C): 330W(Tc) Type: N channel; CategoryDiscrete semiconductor The transistor; File Size357KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRFS4227TRLPBF Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	IRFS4227TRLPBF	-	-	View	Buy Now

IRFS4227TRLPBF Overview

Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 62A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 26mΩ @ 46A, 10V Maximum power dissipation (Ta=25°C): 330W(Tc) Type: N channel

IRFS4227TRLPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	LEAD FREE, D2PAK-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Avalanche Energy Efficiency Rating (Eas)	140 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	62 A
Maximum drain current (ID)	62 A
Maximum drain-source on-resistance	0.026 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	330 W
Maximum pulsed drain current (IDM)	260 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IRFS4227TRLPBF Related Products

	IRFS4227TRLPBF	IRFS4227TRRPBF	IRFSL4227	IRFS4227
Description	Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 62A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 26mΩ @ 46A, 10V Maximum power dissipation (Ta=25°C): 330W(Tc) Type: N channel	Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

Recommended Resources

60Hz time base generator circuit diagram composed of MM5369

M7130 horizontal axis rectangular table surface grinder control circuit

Thermal wire circuit diagram A

KD253B integrated circuit with voice "ding dong" sound

M62213FP some terminal connection circuit diagram c

Single-phase half-wave resistive load rectifier circuit

lan8720A strange reset problem?: I made a board using the stm32f407 chip, and the network solution uses the lan8720A chip. However, I encountered a strange problem: After connecting the board to the power system, turn on the power sw...; bigbat stm32/stm8

What is the maximum value written in the delay function of the 51 single-chip microcomputer?: /**1ms delay function**/ void delay(uint z) { uint x,y; for(x=z;x>0;x--) for(y=110;y>0;y--); }...; dinghao1 51mcu

Discussion on the wireless transmission distance of microwave signals: When it comes to wireless transmission, the issue that everyone is most concerned about is the transmission distance. If it is an ideal transmission environment, this problem is not difficult to solve...; JasonYoo RF/Wirelessly

【Repost】Detailed introduction of commonly used voltage regulators: [align=left][font=微软雅黑]In our daily life, we often use transformers. We can see transformers in TV sets, radio recorders, air conditioners and other electrical appliances. So what are the common trans...; 皇华Ameya360 Power technology

[Photos] About the application of hard disk technology in slow motion production: [Photos and text] On the application of hard disk technology in slow motion production July 26, 2006 9:43 Source: World Radio and TelevisionAuthor: Mr. Sheng Xiaohui, video engineer of the Technical O...; fighting Analog electronics

FAQ_How to calculate the response time from shutdown state to READY state: Author: Helon CHEN, ST engineer Click to download the pdf document:Q: How to calculate the response time from shutdown state to ready state A: To calculate the transition time from SHUTDOWN to READY, ...; nmg ST - Low Power RF

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components