IRFS4227TRRPBF datasheet, PDF - EEWORLD Datasheet

IRFS4227TRRPBF: DescriptionPower Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size357KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFS4227TRRPBF Overview

Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	LEAD FREE, D2PAK-3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	140 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	62 A
Maximum drain current (ID)	62 A
Maximum drain-source on-resistance	0.026 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	330 W
Maximum pulsed drain current (IDM)	260 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IRFS4227TRRPBF	IRFSL4227	IRFS4227	IRFS4227TRLPBF
Description	Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3			Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 62A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 26mΩ @ 46A, 10V Maximum power dissipation (Ta=25°C): 330W(Tc) Type: N channel

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