AO3407A datasheet, PDF - EEWORLD Datasheet

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AO3407A: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 52mΩ @ 4.1A, 10V Maximum power dissipation ( Ta=25°C): 1.4W Type: P-channel -; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，4 Pages; ManufacturerUMW(Guangdong Youtai Semiconductor Co., Ltd.); Websitehttp://www.umw-ic.com/; UMW is a leading provider of LDOs, MOSFETs, DC/DC, RS-232, RS-485, ESD/TVS, optocouplers, logic circuits, temperature sensor from mainland China. UTD's solutions enable low-risk development, lower overall system cost, and faster time-to-market for a variety of global applications.

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AO3407A Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 52mΩ @ 4.1A, 10V Maximum power dissipation ( Ta=25°C): 1.4W Type: P-channel -

AO3407A Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	4.1A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	52mΩ @ 4.1A,10V
Maximum power dissipation (Ta=25°C)	1.4W
type	P channel

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