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TSD5N50MR

Description
Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 4.5A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 160mΩ @ 2.25A, 10V Maximum power dissipation ( Ta=25°C): 48W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size726KB,8 Pages
ManufacturerSHENZHEN TRUESEMI SEMICONDUCTOR CO., LTD.
Websitehttp://www.truesemi.com
Xinan Semiconductor was established in 2008 and is a wholly-owned subsidiary of Allianz Group. It is committed to the sales of MOSFET products in Greater China. In 2009, Allianz Group invested in the field of semiconductor design in South Korea and acquired the 8-inch VD-MOS chip factory of POWER SOLUSTION in South Korea in the same year. POWER SOLUSTION is a professional power semiconductor FAB OWN company. The company was established in 2005. It mainly engages in the production and research and development of POWER MOSFET and IGBT. At present, the monthly production capacity of 8 inches is 12,000 pieces, which is the only PLANNER 8-inch wafer production line in East Asia. They have rich industry experience in product research and development and production processes. The company was recognized as an IT VENTURE enterprise by the Korean government in 2009. It has affiliated research institutes in Far East University and Bucheon, South Korea. At present, VD-MOSFET and IGBT products have obtained 12 technical patents from the Korean government. The products produced by POWER SOLUSTION are widely used in various fields such as welding machines, inverters, ballasts, adapters, chargers, PC power supplies, and TV power supplies. South Korean companies such as Samsung Electronics, LG Electronics, and Konka are all end customers of POWER SOLUSTION.
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TSD5N50MR Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 4.5A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 160mΩ @ 2.25A, 10V Maximum power dissipation ( Ta=25°C): 48W Type: N-channel

TSD5N50MR Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)500V
Continuous drain current (Id) at 25°C4.5A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance160mΩ @ 2.25A,10V
Maximum power dissipation (Ta=25°C)48W
typeN channel

TSD5N50MR Preview

Download Datasheet
TSD5N50MR
TSD5N50MR
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 4.5A,500V,Max.R
DS(on)
=1.6 Ω @ V
GS
=10V
• Low gate charge(typical 12nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
E
AR
I
AR
P
D
T
J
, T
STG
T
C
=25℃ unless otherwise specified
Value
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
Power Dissipation (T
C
= 25℃)
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
T
C
= 25℃
T
C
= 100℃
Units
V
V
A
A
A
mJ
mJ
A
W
500
±
30
4.5*
2.85*
18*
281
24.8
4.5
48
-55 to +150
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
Value
Units
℃/W
℃/W
℃/W
2.6
--
110
© 2018 Truesemi Semiconductor Corporation
Ver.B4
www.truesemi.com
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