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MMBT3904

Description
Rated power: 350mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN
CategoryDiscrete semiconductor    triode   
File Size812KB,6 Pages
ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.
Websitehttp://www.fsbrec.com/
Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of ​​45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.
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MMBT3904 Overview

Rated power: 350mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN

MMBT3904 Parametric

Parameter NameAttribute value
rated power350mW
Collector current Ic200mA
Collector-emitter breakdown voltage Vce40V
Transistor typeNPN
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