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2SCR562F3TR

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN 30V 6A 1W DFN2020-3S
Categorysemiconductor    Discrete semiconductor    The transistor    Bipolar transistor - a bipolar junction transistor (BJT)   
File Size1MB,11 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SCR562F3TR Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN 30V 6A 1W DFN2020-3S

2SCR562F3TR Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
Product CategoryBipolar Transistor - Bipolar Junction Transistor (BJT)
Installation styleSMD/SMT
Package/boxDFN2020-3
Transistor polarityNPN
ConfigurationSingle
Collector-emitter maximum voltage VCEO30 V
Collector-base voltage VCBO30 V
Emitter-Base voltage VEBO6 V
Collector-emitter saturation voltage100 mV
Maximum DC collector current7 A
Gain bandwidth product fT270 MHz
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
DC current gain hFE maximum500
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Collector continuous current6 A
DC collector/Base Gain hfe Min200
Pd-power dissipation2.1 W
Factory packaging quantity3000
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