1N5403 datasheet, PDF - EEWORLD Datasheet

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1N5403: Description3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size44KB，2 Pages; ManufacturerGE Sensing ( Amphenol Advanced Sensors ); Websitehttp://www.vishay.com/

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3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD

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1N5400 THRU 1N5408

GENERAL PURPOSE PLASTIC RECTIFIER

Reverse Voltage -

50 to 1000 Volts

DO-201AD

Forward Current -

3.0 Amperes

FEATURES

♦

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦

High surge current capability

♦

Construction utilizes void-free molded plastic technique

♦

3.0 Ampere operation at

T

L

=105°C with no thermal runaway

♦

Typical I

R

less than 0.1µA

♦

High temperature soldering guaranteed:

250°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.375 (9.5)

0.285 (7.2)

0.052 (1.32)

0.048 (1.22)

DIA.

1.0 (25.4)

MIN.

MECHANICAL DATA

Case:

JEDEC DO-201AD molded plastic body

Terminals:

Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.04 ounce, 1.1 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

1N

5400

1N

5401

1N

5402

1N

5403

1N

5404

1N

5405

1N

5406

1N

5407

1N

5408

UNITS

*Maximum repetitive peak reverse voltage

*Maximum RMS voltage

*Maximum DC blocking voltage to T

A

=150°C

*Maximum average forward rectified current

0.5” (12.5mm) lead length at T

L

=105°C

*Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method) at T

L

=105°C

*Maximum instantaneous forward voltage at 3.0A

*Maximum DC reverse current

at rated DC blocking voltage

T

A

=25°C

T

A

=150°C

V

RRM

V

RMS

V

DC

I

(AV)

50

35

50

100

70

100

200

140

200

300

210

300

400

280

400

3.0

500

350

500

600

420

600

800 1000 Volts

560

700

Volts

800 1000 Volts

Amps

I

FSM

V

F

I

R

I

R(AV)

C

J

R

ΘJA

T

A

T

J

T

STG

200.0

1.2

10.0

500.0

30.0

20.0

+150

-50 to +170

Amps

Volts

µA

pF

°C/W

°C

*Maximum full load reverse current full cycle

average, 0.5" (12.5mm) lead length at T

L

=105°C

Typical junction capacitance

(NOTE 1)

*Typical thermal resistance

(NOTE 2)

Maximum DC blocking voltage temperature

*Operating junction temperature range

*Storage temperature range

NOTES:

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted with 0.8 x 0.8” (20 x 20mm) copper heatsinks

*JEDEC registered value

4/98

1N5403 Related Products

	1N5403	1N5400	1N5401	1N5402	1N5404	1N5405	1N5406	1N5407	1N5408
Description	3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals	-	2	2	2	2	-	2	-	-
Number of components	-	1	1	1	1	-	1	-	-
Processing package description	-	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	-	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN	-	-
state	-	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	-	DISCONTINUED	-	CONSULT MFR
packaging shape	-	round	round	round	round	-	round	-	-
Package Size	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM	-	-
Terminal form	-	Wire	Wire	Wire	Wire	-	Wire	-	-
terminal coating	-	MATTE Tin	tin	tin lead	PURE Tin	-	MATTE Tin	-	-
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	-	AXIAL	-	-
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	-	-
structure	-	single	single	single	single	-	single	-	-
Shell connection	-	isolation	isolation	isolation	isolation	-	isolation	-	-
Diode component materials	-	silicon	silicon	silicon	silicon	-	silicon	-	-
Diode type	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode	-	rectifier diode	-	rectifier diode
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	EFFICIENCY	-	GENERAL PURPOSE	-	-
Phase	-	1	1	1	1	-	1	-	-
Maximum repetitive peak reverse voltage	-	50 V	100 V	200 V	400 V	-	600 V	-	-
Maximum average forward current	-	3 A	3 A	3 A	3 A	-	3 A	-	-
Maximum non-repetitive peak forward current	-	200 A	200 A	200 A	200 A	-	200 A	-	-

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